Download Advances in Non-volatile Memory and Storage Technology by Yoshio Nishi PDF

By Yoshio Nishi

New suggestions are wanted for destiny thinning out of nonvolatile reminiscence. Advances in Non-volatile reminiscence and garage Technology offers an summary of constructing applied sciences and explores their strengths and weaknesses.

After an outline of the present industry, half one introduces advancements in flash applied sciences, together with advancements in 3D NAND flash applied sciences and flash reminiscence for ultra-high density garage units. half appears to be like on the benefits of designing section swap reminiscence and resistive random entry reminiscence applied sciences. It seems to be specifically on the fabrication, houses, and function of nanowire part switch reminiscence applied sciences. Later chapters additionally reflect on modeling of either steel oxide and resistive random entry reminiscence switching mechanisms, in addition to conductive bridge random entry reminiscence applied sciences. ultimately, half 3 seems to be to the way forward for replacement applied sciences. The components coated comprise molecular, polymer, and hybrid natural reminiscence units, and various random entry reminiscence units reminiscent of nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive units.

Advances in Non-volatile reminiscence and garage Technology is a key source for postgraduate scholars and educational researchers in physics, fabrics technological know-how, and electric engineering. it's a helpful instrument for study and improvement managers inquisitive about electronics, semiconductors, nanotechnology, solid-state stories, magnetic fabrics, natural fabrics, and conveyable digital devices.

  • Provides an summary of constructing nonvolatile reminiscence and garage applied sciences and explores their strengths and weaknesses
  • Examines advancements to flash expertise, cost trapping, and resistive random entry memory
  • Discusses rising units reminiscent of these in response to polymer and molecular electronics, and nanoelectromechanical random entry reminiscence (RAM)

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